Product Overview: ZVNL110ASTZ
The ZVNL110ASTZ from Diodes Incorporated is a high-performance, low-threshold N-channel enhancement-mode MOSFET designed for a wide range of applications. This MOSFET offers a compact and efficient solution for power management and switching requirements in various electronic devices.
Key Features
- Low On-Resistance: The ZVNL110ASTZ features a low on-resistance, which minimizes power loss and improves efficiency in high-current applications.
- Low Threshold Voltage: Its low threshold voltage allows for operation at lower gate voltages, making it suitable for low-voltage logic level applications.
- High-Speed Switching: Designed for fast switching applications, this MOSFET enables quick response times and higher performance in circuits that require rapid power modulation.
- Surface-Mount Package: The device comes in a SOT-223 package, which is optimized for automated assembly processes and helps to save space on PCBs.
- High Reliability: Diodes Incorporated's commitment to quality ensures that the ZVNL110ASTZ provides reliable performance over a wide temperature range and under various operating conditions.
Applications
The ZVNL110ASTZ is versatile and can be used in a variety of applications, including:
- Power management systems
- DC-DC converters
- Motor control circuits
- Load switching
- Logic level translation
- Battery management
Technical Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
100V
Continuous Drain Current (I<sub>D)
270mA
Power Dissipation (P<sub>D)
1.25W
Threshold Voltage (V<sub>TH)
1V to 2.5V
Package
SOT-223
With its combination of low on-resistance, high-speed switching, and low threshold voltage, the ZVNL110ASTZ is an excellent choice for designers looking for a MOSFET that delivers both performance and space efficiency.