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ZVP2106ASTZ

Part No ZVP2106ASTZ
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 0.28A TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging AMMO PACKAGE
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1mA
Max Input Capacitance 100pF @ 18V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package E-Line (TO-92 compatible)
Dimension E-Line-3
Win Source Part Number 057962-ZVP2106ASTZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVP2106ASTZ CAD Model

Description

Introducing the ZVP2106ASTZ P-Channel MOSFET from Diodes Incorporated

The ZVP2106ASTZ is a cutting-edge P-Channel enhancement mode Field-Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to provide efficient power management and signal processing within electronic circuits, making it an ideal choice for a plethora of applications, including power supply, motor control, and battery management systems.

Key Features

  • Device Type: P-Channel MOSFET
  • Configuration: Single
  • Drain-Source Breakdown Voltage: -60 V
  • Continuous Drain Current: -1.8 A
  • RDS(on): Maximum of 3.5 Ohms at -10V
  • Package: TO-92-3

The ZVP2106ASTZ MOSFET is housed in a TO-92-3 package, which is known for its robust design and ease of mounting on printed circuit boards. This package is widely recognized for its ability to handle moderate power levels while maintaining a small footprint. The device ensures high reliability and performance with a drain-source breakdown voltage of -60V and a continuous drain current of -1.8A.

Efficiency and Thermal Management

One of the standout aspects of the ZVP2106ASTZ is its thermal management capabilities. The MOSFET is crafted to operate efficiently, with a low on-state resistance (RDS(on)) of maximum 3.5 Ohms at a gate-source voltage of -10V. This low RDS(on) translates to reduced power losses and improved overall efficiency, making it suitable for power-sensitive applications.

Applications

The versatility of the ZVP2106ASTZ allows it to be used in a wide range of applications. It is particularly well-suited for:

  • Load/Power Switching
  • Battery Management Systems
  • Power Supply Circuits
  • DC/DC Converters
  • Motor Control Circuits

With its impressive specifications and reliable performance, the ZVP2106ASTZ from Diodes Incorporated stands as a strong choice for designers and engineers looking to optimize their power management solutions. Whether it's for consumer electronics or industrial systems, this MOSFET is engineered to meet the rigorous demands of modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8125 $52.8125
150+ $0.6667 $100.0050
235+ $0.6459 $151.7865
320+ $0.6250 $200.0000
415+ $0.6042 $250.7430
555+ $0.5417 $300.6435
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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