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ZVP2110GTC

Part No ZVP2110GTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 0.31A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1mA
Max Input Capacitance 100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 8 Ohm @ 375mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120327-ZVP2110GTC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZVP2110GTC CAD Model

Description

Introducing the ZVP2110GTC P-Channel MOSFET by Diodes Incorporated

The ZVP2110GTC is a cutting-edge P-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This high-performance transistor is designed to offer efficient power management and signal processing in a variety of electronic applications. With its compact SOT-223 package, the ZVP2110GTC is an ideal choice for space-constrained designs, providing a perfect balance between size and power.

Key Features

  • Low Threshold Voltage: The ZVP2110GTC has a low threshold voltage, making it suitable for low voltage operation, which is particularly beneficial for battery-operated devices.
  • High Power Dissipation: With a power dissipation of 1.8W, this MOSFET can handle significant power, allowing for robust performance in demanding applications.
  • Enhanced Durability: The device is characterized by its high durability and reliability, with a continuous drain current of -900mA, ensuring stable operation over time.
  • Advanced Technology: Utilizing Diodes Incorporated's advanced trench technology, the ZVP2110GTC offers reduced on-resistance and lower gate charge, enhancing overall efficiency.

Applications

The versatility of the ZVP2110GTC P-Channel MOSFET makes it suitable for a wide range of applications, including but not limited to:

  • Power Management Circuits
  • Load Switches
  • Battery Management Systems
  • Motor Control Modules
  • DC-DC Converters
  • Signal Processing Units

Technical Specifications

Some of the technical specifications of the ZVP2110GTC include:

  • Drain-Source Voltage (V<sub>DS): -100V
  • Gate-Source Voltage (V<sub>GS): ±20V
  • Continuous Drain Current (I<sub>D): -0.9A
  • Power Dissipation (P<sub>D): 1.8W
  • Operating and Storage Temperature Range: -55°C to +150°C

With its robust design and advanced features, the ZVP2110GTC from Diodes Incorporated represents a reliable and efficient solution for designers looking to enhance the performance of their electronic systems. Whether for industrial, consumer, or automotive applications, this P-Channel MOSFET stands out as a high-quality component that delivers exceptional performance.

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