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ZX5T869GTA

Part No ZX5T869GTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 25V 7A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 7A
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 220mV @ 150mA, 6.5A
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 300 @ 1A, 1V
Maximum Power Dissipation 3W
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 120979-ZX5T869GTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZX5T869GTA CAD Model

Description

Introducing the ZX5T869GTA - A High-Efficiency PNP Transistor

The ZX5T869GTA is a state-of-the-art PNP transistor developed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This product is designed to provide high performance and efficiency for a wide range of applications in the electronics sector. The ZX5T869GTA is a testament to Diodes Incorporated's commitment to delivering quality components that meet the evolving needs of modern electronic devices.

Key Features of the ZX5T869GTA

  • High Current Capability: This transistor is capable of handling high continuous collector currents, making it ideal for power management applications.
  • Low Saturation Voltage: The ZX5T869GTA boasts a low collector-emitter saturation voltage, which enhances its efficiency by minimizing power loss during operation.
  • Fast Switching Speed: With its fast switching capabilities, this transistor is suitable for high-speed circuitry, ensuring that electronic devices operate with minimal delay.
  • High Power Dissipation: The device can dissipate a significant amount of power, which is crucial for maintaining stability and reliability under varying operational conditions.

Applications

The versatility of the ZX5T869GTA allows it to be used in various applications, including but not limited to:

  • Power management modules
  • DC-DC converters
  • Battery-powered devices
  • Motor control circuits
  • Signal amplification

Product Specifications

The ZX5T869GTA is housed in a compact SOT-223 package, which is suitable for surface mount technology (SMT) and ensures a small footprint on the PCB. It operates within a junction temperature range of -55°C to +150°C, allowing it to perform reliably in extreme conditions. The transistor also features a collector-base voltage (VCBO) of -30V, a collector-emitter voltage (VCEO) of -20V, and a continuous collector current (IC) of up to -7A, making it robust for various electronic circuits.

Quality and Reliability

Diodes Incorporated ensures that the ZX5T869GTA meets the highest quality standards and reliability requirements. Each transistor is subjected to rigorous testing and quality control measures, guaranteeing that customers receive a product that not only meets but exceeds their expectations.

For engineers and designers looking for a high-performance PNP transistor, the ZX5T869GTA from Diodes Incorporated offers an optimal solution that combines efficiency, speed, and power in a compact package.

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