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ZXM61N02FTC

Part No ZXM61N02FTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.7A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 3.4nC @ 4.5V
Max Input Capacitance 160pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 180 mOhm @ 930mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 057853-ZXM61N02FTC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXM61N02FTC CAD Model

Description

Product Overview: ZXM61N02FTC from Diodes Incorporated

The ZXM61N02FTC is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of semiconductor products. This MOSFET is tailored for power management applications and is widely used in a variety of electronic devices due to its efficiency and reliability.

Key Features

      
  • Low On-Resistance: The ZXM61N02FTC features very low on-resistance (RDS(on)), which ensures minimal power loss and heat generation when the device is in operation, leading to higher efficiency in electronic circuits.
  •   
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-speed applications, enabling efficient power regulation and signal processing.
  •   
  • Low Threshold Voltage: The low threshold voltage allows for the MOSFET to be turned on with lower gate voltages, making it compatible with low-voltage logic levels and suitable for battery-operated devices.
  •   
  • SOT23 Package: Housed in a small SOT23 package, the ZXM61N02FTC is perfect for space-constrained applications, offering a compact solution without sacrificing performance.
  •   
  • High Continuous Drain Current: It supports a high continuous drain current (ID), which is indicative of the device's ability to handle significant power levels, making it a robust choice for demanding applications.

Applications

The versatility of the ZXM61N02FTC allows it to be used in a wide range of applications, including but not limited to:

      
  • Power management circuits
  •   
  • DC/DC converters
  •   
  • Load switches
  •   
  • Battery management systems
  •   
  • Motor control circuits
  •   
  • LED lighting

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the ZXM61N02FTC is no exception. It is produced with rigorous quality control processes and is designed to meet high standards of performance and reliability. This ensures that customers can trust the ZXM61N02FTC for their critical applications where consistent operation is vital.

In summary, the ZXM61N02FTC from Diodes Incorporated stands out as a high-performance solution for designers looking for a reliable and efficient N-channel MOSFET. With its low on-resistance, high-speed switching, and compact form factor, it is an excellent choice for a multitude of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.1690 $50.7000
635+ $0.1583 $100.5205
985+ $0.1529 $150.6065
1,410+ $0.1422 $200.5020
1,830+ $0.1369 $250.5270
2,280+ $0.1316 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,890 pieces
MOQ: 300 pcs
Order Increment : 1 pcs
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