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ZXM61N03FTR

Part No ZXM61N03FTR
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.4A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.1nC @ 10V
Max Input Capacitance 150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 910mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 057854-ZXM61N03FTR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXM61N03FTR CAD Model

Description

Introducing the ZXM61N03FTR MOSFET by Diodes Incorporated

Diodes Incorporated presents the ZXM61N03FTR, a cutting-edge N-Channel enhancement mode Field-Effect Transistor (MOSFET) designed for high-efficiency power management tasks. This powerful semiconductor device is a perfect fit for various applications, including load switch, power conversion, and motor driving circuits, where low on-resistance and high switching speeds are crucial.

Key Features of ZXM61N03FTR:

  • Low On-Resistance: The ZXM61N03FTR boasts an exceptionally low on-resistance of just 30mΩ at a 10V gate drive. This feature ensures minimal power loss and improved efficiency, making it ideal for power-intensive applications.
  • High Continuous Drain Current: With a robust continuous drain current of 58A, this MOSFET can handle significant power levels, making it suitable for demanding electrical environments.
  • Enhanced Thermal Performance: The device comes in a compact, surface-mount package that offers excellent thermal performance, ensuring reliability even under high temperature operating conditions.
  • Logic Level Gate Drive: The ZXM61N03FTR can be driven directly from logic-level voltages, simplifying the design of control circuits and reducing the need for additional level-shifting components.

Applications:

The versatility of the ZXM61N03FTR allows it to be used in a wide range of applications, including but not limited to:

  • DC/DC Converters
  • Power Management Circuits
  • Motor Control Systems
  • Load Switching
  • Battery Management Systems

Quality and Reliability:

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The ZXM61N03FTR is no exception, undergoing rigorous testing to ensure performance and durability. Customers can trust this MOSFET to provide consistent, reliable operation in their electronic designs.

With its powerful features and versatile applications, the ZXM61N03FTR from Diodes Incorporated stands out as a superior choice for designers looking for a high-performance N-Channel MOSFET. Its low on-resistance, high current capacity, and logic level compatibility make it an efficient and practical component for a multitude of power management solutions.

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