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ZXMC4A16DN8TA

Part No ZXMC4A16DN8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH 40V 4A/3.6A 8-Pin SOIC T/R / MOSFET N/P-CH 40V 4A/3.6A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 4A, 3.6A
Maximum Rds On at Id,Vgs 50 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 1V @ 250mA (Min)
Max Gate Charge 17nC @ 10V
Max Input Capacitance 770pF @ 40V
Maximum Power Dissipation 1.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 036932-ZXMC4A16DN8TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name ZXMC4A16DN8
Introduction Date November 09, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian ZXMC4A16DN8TA CAD Model

Description

Introducing the ZXMC4A16DN8TA - Your High-Efficiency MOSFET Solution

The ZXMC4A16DN8TA is a state-of-the-art, dual N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This device is engineered to deliver high efficiency and reliability for a variety of applications, making it an excellent choice for designers looking to optimize their power management systems.

Key Features

  • Advanced Technology: Built using a modern MOSFET process, the ZXMC4A16DN8TA offers low on-resistance and a high continuous drain current, ensuring efficient operation and reduced power losses in circuits.
  • Dual N-Channel Configuration: The dual N-channel setup allows for compact circuit design, providing designers with the flexibility to implement the device in space-constrained applications while optimizing board space.
  • High Continuous Drain Current: With a robust continuous drain current rating, this MOSFET can handle significant power, suitable for demanding tasks.
  • Low Threshold Voltage: The low threshold voltage ensures that the device can be easily driven in low-voltage applications, making it versatile across various electronic designs.
  • Thermal Management: Packaged in a power-efficient SO-8 package, the ZXMC4A16DN8TA effectively dissipates heat, contributing to its longevity and stable performance even under high load conditions.

Applications

The ZXMC4A16DN8TA is ideal for a wide range of applications that demand high efficiency and power density. Some of the common applications include:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switches
  • Battery management systems
  • Energy-efficient power management designs

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The ZXMC4A16DN8TA is no exception, as it undergoes rigorous testing and quality control measures to ensure it meets the industry standards for performance and reliability. Whether you're designing for consumer electronics, automotive, or industrial applications, you can trust the ZXMC4A16DN8TA to exceed your expectations.

Embrace the power of efficiency with the ZXMC4A16DN8TA MOSFET from Diodes Incorporated, and take your designs to the next level of performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7594 $52.7820
70+ $1.4437 $101.0590
110+ $1.3985 $153.8350
150+ $1.3534 $203.0100
195+ $1.3083 $255.1185
260+ $1.1730 $304.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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