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ZXMC4A16DN8TC

Part No ZXMC4A16DN8TC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 40V 4A/3.6A 8SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 4A, 3.6A
Maximum Rds On at Id,Vgs 50 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 1V @ 250mA (Min)
Max Gate Charge 17nC @ 10V
Max Input Capacitance 770pF @ 40V
Maximum Power Dissipation 1.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1120372-ZXMC4A16DN8TC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMC4A16DN8TC CAD Model

Description

The ZXMC4A16DN8TC is a high-performance, dual N-channel enhancement mode field-effect transistor (MOSFET) from Diodes Incorporated, designed for power management applications. This MOSFET is engineered to provide efficient power conversion with minimal losses, making it an ideal choice for a wide range of electronic devices.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which significantly reduces conduction losses and improves overall efficiency in circuits.
  • High-Speed Switching: With its fast switching capabilities, the ZXMC4A16DN8TC is suitable for high-frequency applications, contributing to better performance in power supplies and converters.
  • Dual MOSFET Configuration: The integration of two N-channel MOSFETs in one package allows for compact circuit designs and simplifies the PCB layout process.
  • Power Dissipation: It has a high power dissipation capability, ensuring reliable operation even under high current conditions.
  • Temperature Performance: This MOSFET operates effectively over a wide temperature range, making it versatile for various environments.

Applications

The ZXMC4A16DN8TC is suitable for a variety of applications, including:

  • DC/DC Converters
  • Power Management Circuits
  • Load/Power Switching
  • Motor Control Systems
  • Computing and Networking Systems

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 7.7A Power Dissipation (P<sub>D) 2.5W Operating Temperature Range -55°C to +150°C Package SO-8

Quality and Reliability

Diodes Incorporated is committed to the highest standards of quality and reliability. The ZXMC4A16DN8TC MOSFET is produced in state-of-the-art facilities, ensuring that each component meets rigorous performance criteria and is compliant with industry standards.

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