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ZXMN10A07FTC

Part No ZXMN10A07FTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 700MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 2.9nC @ 10V
Max Input Capacitance 138pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 700 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1120382-ZXMN10A07FTC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN10A07FTC CAD Model

Description

Introducing the ZXMN10A07FTC MOSFET from Diodes Incorporated

The ZXMN10A07FTC is a cutting-edge, high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This device is designed to cater to a wide range of applications, offering a perfect blend of efficiency, reliability, and power management capabilities.

Key Features

  • Low On-Resistance: The ZXMN10A07FTC boasts an exceptionally low on-resistance (RDS(on)), which significantly reduces power losses and improves overall efficiency in operation.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle substantial loads, making it suitable for high-power applications.
  • Enhanced Thermal Performance: The device is encapsulated in a compact, thermally efficient package that ensures optimal heat dissipation, contributing to its longevity and stable performance even under high-temperature conditions.
  • Fast Switching Speed: The fast switching characteristics of the ZXMN10A07FTC allow for quick transitions between on and off states, which is crucial for high-frequency applications and reduces switching losses.

Applications

The versatile nature of the ZXMN10A07FTC MOSFET makes it an ideal choice for a variety of applications, including:

  • Power management systems
  • DC-DC converters
  • Motor drives
  • Battery management
  • Load switches
  • Switching regulators

Product Specifications

The ZXMN10A07FTC comes with a set of specifications designed to meet the demands of modern electronic circuits:

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 5.4A
  • Power Dissipation (PD): 1.25W
  • On-Resistance (RDS(on)): 180mΩ at VGS = 10V
  • Operating Temperature Range: -55°C to +150°C

In summary, the ZXMN10A07FTC MOSFET from Diodes Incorporated is a high-quality component that offers excellent performance for a wide array of electronic applications. Its robust design, high efficiency, and thermal management make it a reliable choice for engineers and designers looking to optimize their power circuits.

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