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ZXMN10A25K

Part No ZXMN10A25K
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.2A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17.16nC @ 10V
Max Input Capacitance 859pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.11W (Ta)
Maximum Rds On at Id,Vgs 125 mOhm @ 2.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1120386-ZXMN10A25K
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN10A25K CAD Model

Description

Product Overview: ZXMN10A25K - Diodes Incorporated

The ZXMN10A25K is a high-performance, energy-efficient MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This N-Channel enhancement mode field-effect transistor is designed for power management applications, offering a compact and reliable solution for a wide range of electronic circuits.

Key Features

  • Low On-Resistance: The ZXMN10A25K boasts an extremely low on-resistance (RDS(on)), which minimizes conduction losses and enhances the overall efficiency of the device. This characteristic is particularly beneficial in applications requiring high current handling with minimal power loss.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle significant levels of current, making it suitable for demanding applications such as power supplies, DC-DC converters, and motor control circuits.
  • Enhanced Thermal Performance: The product is encapsulated in a powerDI®5 package that provides excellent thermal performance, ensuring the MOSFET operates reliably even under high temperature conditions.
  • Voltage Rating: The device operates at 25V, making it ideal for low voltage applications that require efficient power control.

Applications

The ZXMN10A25K is versatile and can be used in various applications, including:

  • Load switches
  • Power management circuits
  • Battery powered devices
  • DC-DC converters
  • Motor control systems

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The ZXMN10A25K MOSFET is no exception, as it undergoes rigorous testing and quality control procedures to ensure it meets the needs of even the most demanding applications.

Conclusion

In summary, the ZXMN10A25K from Diodes Incorporated is a robust, efficient, and versatile N-Channel MOSFET that offers excellent performance in a wide range of power management applications. Its low on-resistance, high current capability, and superior thermal properties make it a top choice for designers looking to optimize their electronic designs for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7601 $60.8080
190+ $0.6237 $118.5030
290+ $0.6043 $175.2470
400+ $0.5848 $233.9200
515+ $0.5653 $291.1295
685+ $0.5068 $347.1580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,600 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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