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ZXMN2AMCTA

Part No ZXMN2AMCTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 2.9A DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A
Maximum Rds On at Id,Vgs 120 mOhm @ 4A, 4.5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 3.1nC @ 4.5V
Max Input Capacitance 299pF @ 15V
Maximum Power Dissipation 1.7W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN (3x2)
Win Source Part Number 143547-ZXMN2AMCTA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXMN2AMCTA CAD Model

Description

Product Overview: ZXMN2AMCTA from Diodes Incorporated

The ZXMN2AMCTA is a high-performance, energy-efficient MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to cater to a wide range of applications, including power management, load switching, and conversion in computing, consumer electronics, lighting, and industrial systems.

Featuring a compact design, the ZXMN2AMCTA is housed in a surface-mount package, ensuring a minimal footprint on printed circuit boards (PCBs) which is crucial for modern space-constrained electronic devices. The product's dimensions and lead-free, RoHS-compliant construction make it an environmentally friendly choice that meets current industry standards for sustainability and safety.

The ZXMN2AMCTA MOSFET operates with an enhanced mode n-channel, which provides a high-speed switching performance. This characteristic is particularly beneficial in applications that require efficient power regulation and fast response times. Its low on-resistance (RDS(on)) minimizes conduction losses, thus improving overall energy efficiency and reducing heat generation within circuits.

With a maximum continuous drain current (ID) rating, this MOSFET can handle significant power levels, making it suitable for high-power applications. The device also offers robust thermal performance due to its high melting point, ensuring reliability even under challenging operating conditions.

The ZXMN2AMCTA is also equipped with a gate-source voltage (VGS) that allows for flexible control and easy interfacing with logic-level signals. This feature simplifies the integration of the MOSFET into different electronic systems, including those that operate at lower voltages.

In summary, the ZXMN2AMCTA from Diodes Incorporated is a versatile and reliable MOSFET that offers excellent performance for a wide array of electronic applications. Its efficient power handling, fast switching capabilities, and compact design make it an ideal choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8089 $60.6675
175+ $0.6638 $116.1650
270+ $0.6430 $173.6100
375+ $0.6222 $233.3250
485+ $0.6015 $291.7275
645+ $0.5393 $347.8485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,300 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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