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ZXMN2B03E6TA

Part No ZXMN2B03E6TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.3A SOT23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14.5nC @ 4.5V
Max Input Capacitance 1160pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 4.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-6
Dimension SOT-23-6
Win Source Part Number 036961-ZXMN2B03E6TA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMN2B03E6TA CAD Model

Description

Introducing the ZXMN2B03E6TA - A High-Performance MOSFET from Diodes Incorporated

The ZXMN2B03E6TA is a state-of-the-art, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is specifically crafted to deliver optimal performance in a wide range of applications, including power management, switching, and amplification tasks.

Key Features

  • Device Type: N-Channel MOSFET
  • Package: The ZXMN2B03E6TA comes in a compact SOT-23 package, which is ideal for saving space on printed circuit boards (PCBs).
  • Drain-Source Voltage (V<sub>DS): It has a maximum drain-source voltage of 30V, which makes it suitable for various low to medium voltage applications.
  • Continuous Drain Current (I<sub>D): The device supports a continuous drain current of up to 4.1A, ensuring efficient handling of high current flows.
  • R<sub>DS(on): The MOSFET boasts a low on-resistance of typically 70mΩ at V<sub>GS = 10V, which translates to reduced power losses and improved efficiency.
  • Gate Threshold Voltage (V<sub>GS(th)): It features a gate threshold voltage range of 1.0V to 2.5V, providing designers with flexibility in control circuitry.

Performance and Applications

The ZXMN2B03E6TA is engineered to exhibit exceptional performance characteristics, including fast switching speeds and high reliability under various operating conditions. Its low gate charge and capacitance ensure minimal switching losses, making it an excellent choice for high-frequency operations.

With its robust thermal and electrical characteristics, the ZXMN2B03E6TA is perfectly suited for a host of applications such as:

  • Power supply converters
  • DC-DC converters
  • Motor drives
  • Load switches
  • Battery management systems
  • LED lighting solutions

Diodes Incorporated's commitment to quality is evident in the ZXMN2B03E6TA's design, which is built to not only meet but exceed the stringent requirements of modern electronic devices. Whether you're designing for consumer electronics, automotive systems, or industrial automation, the ZXMN2B03E6TA is an excellent choice to power your innovations.

For detailed specifications and application notes, engineers and designers are encouraged to consult the datasheet available on the Diodes Incorporated website or contact their technical support team for further assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9596 $52.7780
115+ $0.8988 $103.3620
175+ $0.8685 $151.9875
250+ $0.8077 $201.9250
325+ $0.7774 $252.6550
405+ $0.7470 $302.5350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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