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ZXMN6A07FTA

Part No ZXMN6A07FTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 1.2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 3.2nC @ 10V
Max Input Capacitance 166pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 250 mOhm @ 1.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 036974-ZXMN6A07FTA
Family Name ZXMN6A07F
Introduction Date April 02, 2002
ECCN EAR99
Country of Origin China, Germany
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMN6A07FTA CAD Model

Description

Introducing the ZXMN6A07FTA MOSFET by Diodes Incorporated

The ZXMN6A07FTA is a high-performance, energy-efficient N-Channel enhancement mode Field-Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to meet the needs of modern electronic applications, offering a compact form factor and exceptional electrical characteristics that make it an ideal choice for power management tasks.

Constructed with the latest trench MOSFET technology, the ZXMN6A07FTA offers a low on-resistance (RDS(on)), which significantly reduces conduction losses, leading to higher efficiency in circuit operation. This feature is particularly beneficial in applications where power conservation is critical, such as portable electronics, battery management systems, and energy-sensitive devices.

The device is housed in a small surface-mount package, the SOT-23, which is favored for its space-saving footprint. This makes the ZXMN6A07FTA suitable for densely packed PCBs where real estate is at a premium, without compromising on power handling capabilities. Furthermore, the SOT-23 package allows for efficient thermal dissipation, ensuring that the MOSFET operates within its specified temperature range even under high current conditions.

With a continuous drain current (ID) of up to 1.3A and a maximum drain-source voltage (VDSS) of 60V, the ZXMN6A07FTA is versatile enough to handle a wide array of applications, from load switching to power conversion. Additionally, its fast switching speed enhances performance in high-frequency circuits, making it suitable for modern switching power supplies and DC-DC converters.

Diodes Incorporated's ZXMN6A07FTA also features built-in gate protection, which safeguards the device against electrostatic discharge (ESD) events, ensuring long-term reliability and stability in the field. Its compliance with RoHS standards reflects the company's commitment to environmental responsibility, offering a product that not only meets the technical demands of today's market but also supports eco-friendly initiatives.

Whether you're designing power management systems, looking to improve efficiency in existing circuits, or need a reliable component for high-speed switching applications, the ZXMN6A07FTA from Diodes Incorporated stands out as a robust and versatile solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
560+ $0.0897 $50.2320
1,195+ $0.0840 $100.3800
1,850+ $0.0812 $150.2200
2,650+ $0.0755 $200.0750
3,445+ $0.0726 $250.1070
4,300+ $0.0698 $300.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 135,000 pieces
MOQ: 560 pcs
Order Increment : 1 pcs
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