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ZXMP6A18DN8TA

Part No ZXMP6A18DN8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 60V 3.7A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.7A
Maximum Rds On at Id,Vgs 55 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1580pF @ 30V
Maximum Power Dissipation 1.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 037005-ZXMP6A18DN8TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXMP6A18DN8TA CAD Model

Description

Introducing the ZXMP6A18DN8TA P-Channel MOSFET from Diodes Incorporated

The ZXMP6A18DN8TA is a high-performance, P-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This MOSFET is designed to deliver efficient power management and control in a wide range of applications. With its compact form factor and robust capabilities, the ZXMP6A18DN8TA is an ideal choice for engineers and designers looking to enhance their electronic designs.

Key Features:

  • Low On-Resistance: The device features a low on-resistance of typically 60 mΩ at VGS = -10V, which ensures minimal power loss and improved efficiency in operation.
  • High Power Dissipation: With a power dissipation of 2.3W, this MOSFET can handle significant energy without compromising performance, making it suitable for high-power applications.
  • Advanced Packaging: Housed in a small and leadless 8-pin DFN2020 package, the ZXMP6A18DN8TA offers a compact footprint that is ideal for space-constrained applications.
  • Wide Operating Temperature Range: It operates over a broad temperature range from -55°C to +150°C, allowing for reliable performance in extreme conditions.
  • High Threshold Voltage: A threshold voltage of 1V (min) ensures that the MOSFET can be controlled with lower gate voltages, which is beneficial for battery-operated devices.

Applications:

The ZXMP6A18DN8TA is versatile and can be used in various applications, including:

  • Load switch circuits
  • Power management systems
  • Battery-powered devices
  • DC-DC converters
  • Motor control circuits

Quality and Reliability:

Diodes Incorporated is committed to delivering high-quality products. The ZXMP6A18DN8TA MOSFET is produced with rigorous quality control processes and is designed to meet the stringent requirements of the electronics industry. It provides a reliable solution for your circuit designs, ensuring long-term performance and stability.

Conclusion:

Whether you're developing power-sensitive portable devices or robust industrial machinery, the ZXMP6A18DN8TA P-Channel MOSFET from Diodes Incorporated offers the efficiency, reliability, and performance needed to meet your design challenges. Its advanced features and compact packaging make it an excellent choice for your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6903 $51.7725
180+ $0.5664 $101.9520
275+ $0.5487 $150.8925
380+ $0.5310 $201.7800
490+ $0.5133 $251.5170
655+ $0.4602 $301.4310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,803 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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