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ZXTP2013ZTA

Part No ZXTP2013ZTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 3.5A SOT89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 3.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 300mV @ 400mA, 4A
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 1A, 1V
Maximum Power Dissipation 2.1W
Frequency - Transition 125MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 037020-ZXTP2013ZTA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXTP2013ZTA CAD Model

Description

Product Overview: ZXTP2013ZTA from Diodes Incorporated

The ZXTP2013ZTA is a high-performance PNP transistor designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This transistor is part of the ZXTP series, known for their efficiency and reliability in various electronic applications. The ZXTP2013ZTA is housed in a compact SOT-89 package, making it suitable for surface-mounted design requirements.

Key Features

  • High Current Capability: The ZXTP2013ZTA can handle continuous collector currents up to 5A, making it suitable for high-power switching and amplification applications.
  • Low Saturation Voltage: With a collector-emitter saturation voltage of typically 150mV at 1A, this transistor ensures low power loss and better efficiency in operation.
  • High Power Dissipation: It has a power dissipation of 2W, which enables it to withstand higher thermal environments and improves the longevity of the product.
  • Complementary NPN Type Available: For applications requiring complementary push-pull configurations, a matching NPN transistor (ZXTP2007ZTA) is also available.

Applications

The ZXTP2013ZTA is versatile and can be used in a wide range of applications, including:

  • Power management circuits
  • Load switches
  • Linear regulators
  • Battery-driven devices
  • Signal processing
  • Audio amplifiers
  • Driving motors

Product Specifications

Here are some of the key specifications of the ZXTP2013ZTA:

  • Collector-Emitter Voltage (Vceo): -20V
  • Collector Current (Ic): -5A
  • Collector-Emitter Saturation Voltage (Vcesat): -150mV at 1A
  • Power Dissipation (Pd): 2W
  • DC Current Gain (hFE): 100 to 600 at 1A Vce
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

With its robust performance and small form factor, the ZXTP2013ZTA is an excellent choice for designers looking to optimize their power circuit designs. Diodes Incorporated's commitment to quality ensures that this transistor will provide reliable service throughout its operational life.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1071 $55.3550
100+ $1.0357 $103.5700
150+ $1.0000 $150.0000
220+ $0.9286 $204.2920
280+ $0.8929 $250.0120
350+ $0.8572 $300.0200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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