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ZXTP5401ZTA

Part No ZXTP5401ZTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 150V 0.6A SOT89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 60 @ 10mA, 5V
Maximum Power Dissipation 1.2W
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 037040-ZXTP5401ZTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXTP5401ZTA CAD Model

Description

Introducing the ZXTP5401ZTA PNP Transistor from Diodes Incorporated

The ZXTP5401ZTA is a high-performance PNP transistor designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets. This transistor is crafted for applications that demand robust and reliable performance, making it an excellent choice for designers and engineers across various industries.

With its compact SOT-89 package, the ZXTP5401ZTA offers a space-saving solution without compromising on power handling capabilities. This feature is particularly beneficial for modern electronic applications where board space is at a premium. The device is capable of handling a collector current of up to 2A, making it suitable for medium power applications.

The ZXTP5401ZTA boasts a collector-emitter voltage (VCEO) of 40V, which allows it to withstand voltage spikes and surges commonly encountered in electronic circuits. This makes it a reliable component for use in power management circuits, as well as for driving loads in a variety of applications including motor control, solenoid control, and power regulation modules.

Additionally, the transistor features a low saturation voltage (VCE(sat)) of typically 150mV at 1A, ensuring high efficiency and minimal power loss during operation. This characteristic is critical for applications that require low power consumption and extended battery life, such as portable and battery-operated devices.

Another notable attribute of the ZXTP5401ZTA is its high current gain (hFE) performance, which ensures that the transistor can be driven with minimal base current, thereby reducing the overall power requirement of the driving circuit. The high hFE also contributes to the consistent and predictable amplification of signals, which is essential in analog signal processing applications.

In summary, the ZXTP5401ZTA from Diodes Incorporated is a versatile and reliable PNP transistor that offers a potent combination of compactness, power handling, and efficiency. Its robust characteristics make it an ideal choice for a wide range of applications, from simple switching tasks to more complex power management and amplification roles.

For detailed specifications, application notes, and additional information, engineers and designers are encouraged to consult the datasheet and technical resources provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
535+ $0.0936 $50.0760
1,305+ $0.0768 $100.2240
2,020+ $0.0744 $150.2880
2,780+ $0.0720 $200.1600
3,595+ $0.0696 $250.2120
4,810+ $0.0624 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,000 pieces
MOQ: 535 pcs
Order Increment : 1 pcs
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