This MOSFET transistor is designed for use in discrete semiconductor products. It is an N-channel FET type with a drain-to-source voltage of 30 V and a power dissipation of 56 W. This MOSFET transistor is designed for use in discrete semiconductor products.

• FET Type: N-Channel
• Drain-to-Source Voltage: 30 V
• Power Dissipation: 56 W
• Gate-Source Voltage: ±20 V
• Operating Temperature: -55°C to 150°C
• Package/Case: 8-PowerTDFN
• Supplier Device Package: 8-QFN (5x6)
• Input Capacitance: 1860 pF @ 15 V
• Gate Charge: 14 nC @ 4.5 V
• Continuous Drain Current: 110 A @ 25°C
• Rds On (Max): 2.65 mOhm @ 20 A and 10 V
• Gate-Source Threshold Voltage: 2.5 V @ 250 µA
• Drive Voltage (Rds On): 4.5 V (max), 10 V (min)