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Same model may have multiple batches, images only for reference.
EPC2302 Real Image
Same model may have multiple batches, images only for reference.

EPC2302

Part No EPC2302
Manufacturer EPC
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS GAN 100V DIE .0019OHM
Datasheet
EPC2302 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number 2000495-EPC2302
Win Source Part Number Cross
Manufacturer EPC
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series eGaN®
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 101A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 50A, 5V
Ultra Librarian 3D Model Ultra Librarian EPC2302 CAD Model

Description

The eGaN® series from EPC is a discrete semiconductor product that features FETs, MOSFETs, Single FETs, and MOSFETs.

  • Packaging: tape and reel, cut tape, or Digi-Reel®
  • Technology: GaNFET (Gallium Nitride)
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 100 V
  • Current Continuous Drain (Id) @ 25°C: 101A (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
  • Product Status: active
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Availability: Cross-reference information is available

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