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FCH085N80-F155

Part No FCH085N80-F155
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 46A TO247  /  N-Channel 800 V 46A (Tc) 446W (Tc) Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Series SuperFET® II
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4.6mA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10825 pF @ 100 V
FET Feature Super Junction
Power Dissipation (Max) 446W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
ECCN EAR99
HTSUS 8542.39.0001
Other Names 2156-FCH085N80-F155,ONSFSCFCH085N80-F155
Standard Package 1
Win Source Part Number 1031067-FCH085N80-F155
Ultra Librarian 3D Model Ultra Librarian FCH085N80-F155 CAD Model

Description

The Fairchild Semiconductor FCH085N80-F155 is a MOSFET (Metal Oxide) transistor with an N-Channel FET type.

  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10825 pF @ 100 V
  • Power Dissipation (Max): 446W (Tc)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.9886 $75.9544
8+ $15.5804 $124.6432
12+ $15.0935 $181.1220
16+ $14.6066 $233.7056
21+ $14.1198 $296.5158
28+ $12.6590 $354.4520
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Availability: 4,670 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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