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FCH110N65F-F155

Part No FCH110N65F-F155
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 35A TO247  /  N-Channel 650 V 35A (Tc) 357W (Tc) Through Hole TO-247-3
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Series FRFET®, SuperFET® II
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4895 pF @ 100 V
Power Dissipation (Max) 357W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-FCH110N65F-F155,ONSFSCFCH110N65F-F155
Standard Package 1
Win Source Part Number 1007989-FCH110N65F-F155
Ultra Librarian 3D Model Ultra Librarian FCH110N65F-F155 CAD Model

Description

The FCH110N65F-F155 is an N-channel MOSFET transistor from Fairchild Semiconductor.

  • Channel Type: N-channel
  • Series: SuperFET II FRFET®
  • Drain to Source Voltage (Vdss): 650V
  • Current-Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 3.5mA
  • Power Dissipation (Max): 357W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
  • Mounting Type: through hole
  • Package: TO-247-3
  • Gate Drive Voltage (Max Rds On, Min Rds On): 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.3582 $50.8656
20+ $5.2170 $104.3400
30+ $5.0540 $151.6200
41+ $4.8910 $200.5310
53+ $4.7279 $250.5787
71+ $4.2388 $300.9548
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Availability: 364 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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