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Same model may have multiple batches, images only for reference.
FCI7N60 Real Image
Same model may have multiple batches, images only for reference.

FCI7N60

Part No FCI7N60
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V N-Channel MOSFET
Datasheet
FCI7N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series SuperFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 920pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 83W (Tc)
Rds On (Maximum) @ Id, Vgs 600 mOhm @ 3.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1173614-FCI7N60
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FCI7N60
Introduction Date July 05, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian FCI7N60 CAD Model

Description

The FCI7N60 SuperFET MOSFET is a high-power device manufactured by onsemi.

  • Drain-Source Voltage (Max): 600V
  • Continuous Drain Current (Max) @ 25°C: 7A
  • Rds On (Max) @ 3.5A, 10V: 600 mOhm
  • Gate Charge (Qg) @ 10V: 30nC
  • Input Capacitance (Ciss) @ 25V: 920pF
  • Power Dissipation @ Tc: 83W
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA

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Quantity Unit Price Ext. Price
45+ $1.3456 $60.5520
105+ $1.1042 $115.9410
165+ $1.0695 $176.4675
225+ $1.0349 $232.8525
290+ $1.0002 $290.0580
390+ $0.8974 $349.9860
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