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FDB3652

Part No FDB3652
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 61A TO-263AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 2880pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 61A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 001095-FDB3652
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDB3652 CAD Model

Description

FDB3652

The FDB3652 is a cutting-edge N-channel MOSFET known for its reliability and performance efficiency. Designed for various applications, this MOSFET is integral in power management systems.

  • High efficiency in DC-DC converters
  • Ideal for synchronous rectification in SMPS
  • Used in motor control systems

Features and Benefits:

  • Low on-resistance reducing power loss
  • High-speed switching for improved efficiency
  • Robust construction ensuring durability and reliability

The FDB3652 is essential for projects requiring high power density and efficiency, making it a popular choice among professionals in electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5377 $61.5080
95+ $1.2617 $119.8615
145+ $1.2224 $177.2480
200+ $1.1829 $236.5800
255+ $1.1435 $291.5925
340+ $1.0252 $348.5680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,200 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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