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Same model may have multiple batches, images only for reference.
IRF7201PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7201PBF

Part No IRF7201PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.3A 8-SOIC
Datasheet
IRF7201PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 7.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046580-IRF7201PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7201PBF CAD Model

Description

The Infineon Technologies N-Channel MOSFET is a high-performance electronic component designed for use in various electronic devices.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 7.3A
  • Maximum Power Dissipation: 2.5W (Tc)
  • Maximum Rds On @ 7.3A, 10V: 30 mOhm
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 28nC @ 10V
  • Maximum Input Capacitance: 550pF @ 25V
  • Not Suitable For: new designs
  • Package: 8-SO
  • Mounting: on a tube/rail.

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25+ $2.0374 $50.9350
60+ $1.6717 $100.3020
93+ $1.6195 $150.6135
128+ $1.5672 $200.6016
166+ $1.5150 $251.4900
221+ $1.3583 $300.1843
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