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Same model may have multiple batches, images only for reference.
IRF7233PBF
Same model may have multiple batches, images only for reference.

IRF7233PBF

Part No IRF7233PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 9.5A 8-SOIC
Datasheet
IRF7233PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA
Max Gate Charge 74nC @ 5V
Max Input Capacitance 6000pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 9.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 103811-IRF7233PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7233PBF CAD Model

Description

The IRF7233PBF is a P-channel MOSFET with a drain-source breakdown voltage of 12V.

  • Designed for: Discrete semiconductor products
  • Maximum Power Dissipation: 2.5W
  • Gate-Source Threshold Voltage: 600mV
  • Maximum Gate Charge: 74nC
  • Package: 8-SO package
  • Maximum Rds On: 20 mOhm @ 9.5A and 4.5V
  • Popularity: High
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4758 $59.4750
300+ $0.3904 $117.1200
460+ $0.3783 $174.0180
635+ $0.3661 $232.4735
820+ $0.3538 $290.1160
1,095+ $0.3172 $347.3340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,080 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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