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Same model may have multiple batches, images only for reference.
IRFP3306PBF Real Image
Same model may have multiple batches, images only for reference.

IRFP3306PBF

Part No IRFP3306PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO-247AC
Datasheet
IRFP3306PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 4520pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 220W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 1046987-IRFP3306PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFP3306PBF CAD Model

Description

The IRFP3306PBF is a N-Channel MOSFET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 120A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Rds On at Id, Vgs: 4.2 mOhm @ 75A and 10V
  • Power Dissipation: Up to 220W @ Tc
  • Packaging: TO-247AC
  • Ideal For: Discrete semiconductor products

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