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Same model may have multiple batches, images only for reference.
IRF7233TR
Same model may have multiple batches, images only for reference.

IRF7233TR

Part No IRF7233TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 9.5A 8-SOIC
Datasheet
IRF7233TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA
Max Gate Charge 74nC @ 5V
Max Input Capacitance 6000pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 9.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 097723-IRF7233TR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7233TR CAD Model

Description

The supply and demand status is sufficient.

  • Polarity: P-Channel
  • Power Dissipation: 2.5W (Ta)
  • Packaging: Reel-TR
  • Mounting: SMD (SMT)
  • Drive Voltage: 2.5V, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 9.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 600mV @ 250μA
  • Max Input Capacitance: 6000pF @ 10V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On at Id,Vgs: 20 mOhm @ 9.5A, 4.5V

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