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Same model may have multiple batches, images only for reference.
FDB5690 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDB5690

Part No FDB5690
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 32A TO-263AB
Datasheet
FDB5690 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1120pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 16A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 001100-FDB5690
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDB5690 CAD Model

Description

Description of FDB5690

Engineered for precision, the FDB5690 component offers exceptional performance in electronic applications requiring high accuracy and efficiency.

Features and Benefits

  • Precision current control
  • High reliability with prolonged device lifespan
  • Superior thermal management
  • Compact design easing integration in complex circuits

Applications

  • Battery management systems
  • Precision motor control
  • Automotive electronics
  • Robotics

The FDB5690 is the component of choice for applications demanding high accuracy and efficiency, ensuring superior performance and system integrity.

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