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FDB603AL

Part No FDB603AL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 15 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -65°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 128893-FDB603AL
Ultra Librarian 3D Model Ultra Librarian FDB603AL CAD Model

Description

FDB603AL - Advanced Switching MOSFET

The FDB603AL is designed to meet the needs of demanding power applications with its advanced switching capabilities and efficient performance. It is ideal for enhancing the performance of electronic devices and reducing energy consumption.

  • Applications:
    • Electric vehicles
    • Industrial automation
    • Battery management systems
    • Renewable energy systems
  • Features and Benefits:
    • High-speed performance for quicker response times
    • Low power loss characteristics
    • Reliable and consistent in harsh environments
    • Optimized for thermal and electrical efficiency

The FDB603AL is a versatile component that maximizes efficiency and reliability, making it an ideal choice for a range of modern electronic projects.

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