The FDB8444 is an N-Channel MOSFET with a power dissipation (Max) of 167W (Tc) from Fairchild/ON Semiconductor.

• Power Dissipation (Max): 167W (Tc)
• Drive Voltage: 10V
• Mounting Type: SMD (SMT)
• Packaging: Reel - TR
• Case / Package: D2PAK (TO-263AB)
• Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current @ 25°C: 70A (Tc)
• Gate-Source Threshold Voltage: 4V @ 250μA
• Gate Charge (Max): 128nC @ 10V
• Input Capacitance (Max): 8035pF @ 25V
• Gate-Source Voltage (Max): ±20V
• Rds On (Max) @ Id,Vgs: 5.5 mOhm @ 70A, 10V
• Category: Discrete Semiconductor Products
• Popularity: Medium
• Supply and Demand Status: Balance
• Package Quantity: 800
• Product Status: Active
• Temperature Range: -55°C to 175°C (TJ)