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Same model may have multiple batches, images only for reference.
FDB8444_F085 Real Image
Same model may have multiple batches, images only for reference.

FDB8444_F085

Part No FDB8444_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 70A D2PAK
Datasheet
FDB8444_F085 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 128nC @ 10V
Max Input Capacitance 8035pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037986-FDB8444_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB8444_F085 CAD Model

Description

The Fairchild/ON Semiconductor FDB8444_F085 is an N-channel MOSFET that belongs to the discrete semiconductor products category.

  • Category: Discrete Semiconductor Products
  • Package: D2PAK (TO-263AB)
  • Power Dissipation: 167W (Tc)
  • Supply and Demand Status: Sufficient
  • Maximum Rds On at Id,Vgs: 5.5 mOhm @ 70A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA

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