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Same model may have multiple batches, images only for reference.
FDB8870_F085 Real Image
Same model may have multiple batches, images only for reference.

FDB8870_F085

Part No FDB8870_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A TO-263AB
Datasheet
FDB8870_F085 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 23A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 132nC @ 10V
Max Input Capacitance 5200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037994-FDB8870_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB8870_F085 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a N-channel polarity power transistor that can dissipate a maximum power of 160W (Tc).

  • Power Dissipation (Max): 160W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 23A (Ta), 160A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 3.9 mOhm @ 35A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge: 132nC @ 10V
  • Max Input Capacitance: 5200pF @ 15V
  • Case/Package: D2PAK (TO-263AB)
  • Mounting Type: SMD (SMT)
  • Supply and Demand Status: sufficient

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