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FDB8876

Part No FDB8876
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 71A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1700pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 066916-FDB8876
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDB8876 CAD Model

Description

FDB8876 Description

The FDB8876 stands out as a high-efficiency N-channel power MOSFET, designed to handle high power and current with ease. Featuring a robust construction and low RDS(on), it is optimized for applications that require efficient load switching and reduced energy consumption.

  • Applications:
    • Energy-efficient lighting solutions
    • Industrial power converters
    • Fast switching circuits
    • AC-DC power supply units
  • Features and Benefits:
    • Low RDS(on) for reduced power losses
    • Fast switching speed
    • Durable and reliable construction
    • Enhanced thermal conductivity
    • Environmentally compliant with RoHS

Specifications include a drain-source voltage capability of 60V and a current rating of 75A, making it an excellent choice for high-performance, energy-conscious uses. Its RoHS compliant packaging ensures reduced environmental impact.

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