The Fairchild/ON Semiconductor FDD3510H is a N and P-channel, common drain FET type electronic component.

• Features: logic level gate
• Case/Package: TO-252-4L
• Maximum Power Dissipation: 1.3W
• Drain-Source Breakdown Voltage: 80V
• Continuous Drain Current @ 25°C: 4.3A and 2.8A
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 18nC @ 10V
• Maximum Input Capacitance: 800pF @ 40V
• Maximum Rds On @ Id, Vgs: 80 mOhm @ 4.3A, 10V
• Operating Temperature: -55°C to 150°C (TJ)
• Compliance: halogen-free compliant
• Estimated EOL Date: 2027
• Usage: common-used part with high popularity