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Same model may have multiple batches, images only for reference.
FDD6612A Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDD6612A

Part No FDD6612A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.5A DPAK
Datasheet
FDD6612A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.5A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.4nC @ 5V
Max Input Capacitance 660pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 36W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 015946-FDD6612A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD6612A CAD Model

Description

Product Overview

The FDD6612A is an advanced N-channel MOSFET that combines high speed and low on-resistance. Designed for optimized performance, it is suitable for a wide range of power electronics applications.

Features and Benefits

  • Ultra-low on-resistance
  • Fast switching capabilities
  • High efficiency design
  • Compact package suitable for space-constrained designs

Applications/Projects

  • Power supply units
  • Inverter circuits
  • Load switch applications
  • High-efficiency synchronous buck converters

Additional Details

The FDD6612A is engineered for applications requiring high efficiency and compact packaging. Its fast switching properties reduce power dissipation, ensuring optimal performance.

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190+ $0.6091 $115.7290
295+ $0.5901 $174.0795
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705+ $0.4950 $348.9750
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