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FDD86250 Real Image FDD86250 real image15432
Same model may have multiple batches, images only for reference.
FDD86250 Real Image FDD86250 real image15432
FDD86250 Real Image FDD86250 real image15432
Same model may have multiple batches, images only for reference.

FDD86250

Part No FDD86250
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 8A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 2110pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 132W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038121-FDD86250
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD86250 CAD Model

Description

The Fairchild/ON Semiconductor FDD86250 MOSFET is a powerful N-Channel transistor designed for use in a variety of electronic circuits.

  • Maximum Power Dissipation: 3.1W (Ta), 132W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current @ 25°C: 8A (Ta), 50A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 33nC @ 10V
  • Case: D-PAK (TO-252AA)
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63

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Quantity Unit Price Ext. Price
45+ $1.1761 $52.9245
105+ $0.9650 $101.3250
165+ $0.9348 $154.2420
225+ $0.9047 $203.5575
290+ $0.8745 $253.6050
385+ $0.7841 $301.8785
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