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FDG6303N

Part No FDG6303N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 0.5A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 500mA
Maximum Rds On at Id,Vgs 450 mOhm @ 500mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 2.3nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Win Source Part Number 015984-FDG6303N
Family Name FDG6303N
Introduction Date August 06, 1999
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDG6303N CAD Model

Description

The FDG6303N is a 2 N-Channel Dual FET manufactured by Fairchild/ON Semiconductor. It features a logic level gate and is designed for use in discrete semiconductor products.

  • Mounting: Surface Mount Device (SMD)
  • Power Dissipation: 300mW
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 500mA @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 2.3nC @ 4.5V
  • Maximum Input Capacitance: 50pF @ 10V
  • Maximum Rds On: 450 mOhm @ 500mA, 4.5V
  • Compliance: Halogen-Free
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2323 $51.1060
460+ $0.2176 $100.0960
715+ $0.2103 $150.3645
1,025+ $0.1956 $200.4900
1,330+ $0.1882 $250.3060
1,660+ $0.1809 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,000 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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