The Fairchild/ON Semiconductor FDG6322C is a N and P-Channel FET type with a logic level gate feature. This integrated circuit is part of the FDG6322C family and is mounted using the SMD (SMT) method.

• FET Type: N and P-Channel
• Mounting: SMD (SMT)
• Packaging: Reel - TR
• Case/Package: SC-70-6
• Temperature Range: -55°C to 150°C (TJ)
• Power Dissipation: 300mW (Max)
• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 220mA, 410mA @ 25°C
• Gate-Source Threshold Voltage: 1.5V @ 250μA
• Gate Charge: 0.4nC @ 4.5V (Max)
• Input Capacitance: 9.5pF @ 10V (Max)
• Rds On: 4 Ohm @ 220mA, 4.5V (Max)
• Alternative Parts: FDG6322C_Q, FDG6322C_D87Z
• Quantity per Package: 3k pcs

This product is used in industrial power management applications.