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Same model may have multiple batches, images only for reference.
FDI3652 Real Image
Same model may have multiple batches, images only for reference.

FDI3652

Part No FDI3652
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 61A TO-262AA
Datasheet
FDI3652 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 2880pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 61A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262AA
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040259-FDI3652
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDI3652 CAD Model

Description

The FDI3652 is a high-performance N-channel MOSFET from Fairchild/ON Semiconductor.

  • Drain-Source Voltage (Max): 100 V
  • Continuous Drain Current: 9 A @ 25°C
  • Applications: Power management (DC-DC converters, motor control, load switches)
  • Package: TO-262AA
  • Compliance: RoHS
  • Features: Low on-resistance, fast switching speed

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