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Same model may have multiple batches, images only for reference.
FDMA410NZ Real Image
Same model may have multiple batches, images only for reference.

FDMA410NZ

Part No FDMA410NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 9.5A 6-MICROFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1080pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.4W (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 9.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-MicroFET (2x2)
Dimension 6-VDFN Exposed Pad
Win Source Part Number 107887-FDMA410NZ
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMA410NZ CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is an N-Channel polarity transistor.

  • Power Dissipation (Max): 2.4W (Ta)
  • Drive Voltage: 1.5V (Max Rds On), 4.5V (Min Rds On)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 9.5A (Ta)
  • Package: 6-MicroFET (2x2)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Gate Charge (Max): 14nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.5A, 4.5V
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7548 $60.3840
165+ $0.7062 $116.5230
255+ $0.6818 $173.8590
365+ $0.6331 $231.0815
475+ $0.6088 $289.1800
595+ $0.5844 $347.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 71,200 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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