The FDMS36101L is an N-Channel PowerTrench® MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This MOSFET is designed for high-efficiency synchronous rectification and power management applications. It features a low on-resistance (RDS(on)) and optimized gate charge (Qg) for superior performance.

Applications

• Synchronous Rectification
• DC-DC Converters
• Power Management in Notebooks
• Power Management in Desktops
• Server Power Supplies
• High-Frequency Switching

Features

• N-Channel MOSFET
• Low On-Resistance (RDS(on))
• Optimized Gate Charge (Qg)
• High Current Capability
• Fast Switching Speed
• 100% UIS Tested
• RoHS Compliant
• PowerTrench® Technology

Benefits

• High Efficiency in Switching Applications
• Reduced Power Loss
• Improved Thermal Performance
• Enhanced Reliability
• Simplified Gate Drive Circuitry
• Meets Environmental Standards
• Robust Performance

Technical Specifications

The FDMS36101L is an N-Channel enhancement mode MOSFET. It features a very low on-resistance (RDS(on)), typically in the milliohm range, minimizing conduction losses. The drain-source voltage (VDS) is typically around 30V. It boasts a high continuous drain current (ID), enabling it to handle significant power levels. It is designed with an optimized gate charge (Qg) to minimize switching losses. It provides fast switching speeds, reducing switching losses in high-frequency applications. The gate-source voltage (VGS) is typically +/- 20V. The 100% UIS (Unclamped Inductive Switching) testing ensures its ability to withstand inductive loads. It is RoHS compliant, meeting environmental standards. Fairchild's PowerTrench® technology enhances the MOSFET's performance and efficiency. It is offered in a surface-mount package with enhanced thermal performance.

The FDMS36101L is optimized for high-efficiency switching applications, such as synchronous rectification in DC-DC converters. The very low on-resistance minimizes power loss and improves thermal performance. The optimized gate charge reduces switching losses, further improving efficiency. Its robust design and 100% UIS testing ensure its ability to withstand demanding operating conditions. This MOSFET provides a balance of performance, efficiency, and reliability, making it suitable for power management in notebooks, desktops, server power supplies and various other high-frequency applications. Its enhanced thermal performance allows for higher power density designs.