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Same model may have multiple batches, images only for reference.
FDMS3615S Real Image
Same model may have multiple batches, images only for reference.

FDMS3615S

Part No FDMS3615S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 16A/18A 8-PQFN
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 16A, 18A
Maximum Rds On at Id,Vgs 5.8 mOhm @ 16A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1765pF @ 13V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 130819-FDMS3615S
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS3615S CAD Model

Description

The FDMS3615S is a dual asymmetrical N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It is an active product with medium popularity and limited supply.

  • Product Type: Power MOSFET
  • Package: Power56
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 25V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Operating Temperature: -55°C to 150°C (TJ)
  • Quantity per Package: 3k pcs

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