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FDMS5672

Part No FDMS5672
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10.6A POWER56
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10.6A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2800pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 11.5 mOhm @ 10.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Dimension 8-PowerWDFN
Win Source Part Number 124870-FDMS5672
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS5672 CAD Model

Description

The Fairchild/ON Semiconductor 124870-FDMS5672 is a high-performance N-channel MOSFET designed for power management and consumer electronics.

  • Maximum Power Dissipation: 2.5W (Ta) / 78W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (25°C): 10.6A (Ta) / 22A (Tc)
  • Maximum Rds On: 11.5 mOhm @ 10.6A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 45nC @ 10V
  • Maximum Input Capacitance: 2800pF @ 30V
  • Maximum Gate-Source Voltage: ±20V
  • Package: 8-PowerWDFN
  • Packaging: Reel - TR
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6927 $51.6978
34+ $3.0300 $103.0200
52+ $2.9353 $152.6356
71+ $2.8406 $201.6826
92+ $2.7459 $252.6228
122+ $2.4618 $300.3396
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,690 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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