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Same model may have multiple batches, images only for reference.
FDMS8622 Real Image
Same model may have multiple batches, images only for reference.

FDMS8622

Part No FDMS8622
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.8A 8-PQFN
Datasheet
FDMS8622 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.8A (Ta), 16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 400pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 31W (Tc)
Maximum Rds On at Id,Vgs 56 mOhm @ 4.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6), Power56
Dimension 8-PowerTDFN
Win Source Part Number 1038263-FDMS8622
Family Name FDMS8622
Introduction Date July 01, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS8622 CAD Model

Description

The FDMS8622 is a MOSFET power transistor manufactured by Fairchild/ON Semiconductor.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current @ 25°C: 4.8A
  • Maximum Rds On @ 4.8A, 10V: 56 mOhm
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge @ 10V: 7nC
  • Package: 8-PQFN (5x6), Power56
  • Power Dissipation (Ta): 2.5W
  • Power Dissipation (Tc): 31W
  • Suitable for: Discrete semiconductor products
  • Drive Voltage: 6V, 10V
  • Halogen-Free: Compliant
  • Estimated EOL Date: 2025

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