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FDN306P

Part No FDN306P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 2.6A SSOT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1138pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 2.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 016099-FDN306P
Family Name FDN306P
Introduction Date December 20, 2001
ECCN EAR99
Country of Origin Israel, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDN306P CAD Model

Description

The Fairchild/ON Semiconductor 016099-FDN306P is a P-channel MOSFET that is designed for use in power management applications. With a Win Source Part Number of 016099, this MOSFET is easy to identify and source. It has a high popularity, and its supply and demand status is sufficient.

  • Maximum Power Dissipation: 500mW
  • Maximum Drain-Source Breakdown Voltage: 12V
  • Maximum Continuous Drain Current: 2.6A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1887 $50.0055
570+ $0.1768 $100.7760
880+ $0.1708 $150.3040
1,260+ $0.1589 $200.2140
1,640+ $0.1529 $250.7560
2,045+ $0.1469 $300.4105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 98,160 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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