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Same model may have multiple batches, images only for reference.
FDP027N08B_F102 Real Image
Same model may have multiple batches, images only for reference.

FDP027N08B_F102

Part No FDP027N08B_F102
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 120A TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 178nC @ 10V
Max Input Capacitance 13530pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 246W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 126149-FDP027N08B_F102
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDP027N08B_F102 CAD Model

Description

This electronic component is a Fairchild/ON Semiconductor product with a Win Source Part Number of 126149-FDP027N08B_F102. It is a MOSFET technology with an N-Channel polarity. It has a balanced supply and demand status.

  • Power Dissipation: 246W (Tc)
  • Continuous Drain Current @ 25°C: 120A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Gate-Source Voltage (Max): ±20V
  • Package: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.1663 $54.1619
30+ $3.4185 $102.5550
46+ $3.3117 $152.3382
63+ $3.2049 $201.9087
81+ $3.0980 $250.9380
109+ $2.7776 $302.7584
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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