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FDP036N10A

Part No FDP036N10A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V TO-220AB-3 / Trans MOSFET N-CH Si 100V 214A 3-Pin(3+Tab) TO-220 Tube
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 116nC @ 10V
Max Input Capacitance 7295pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 333W (Tc)
Maximum Rds On at Id,Vgs 3.6 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067008-FDP036N10A
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 800
Family Name FDP036N10A
Introduction Date September 14, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FDP036N10A CAD Model

Description

The Fairchild/ON Semiconductor FDP036N10A is an N-channel MOSFET polarity. It has limited supply and demand status.

  • Power Dissipation (Max): 333W (Tc)
  • Case/Package: TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 120A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Max): 116nC @ 10V
  • Input Capacitance (Max): 7295pF @ 25V
  • Gate-Source Voltage (Max): ±20V
  • Operating Temperature: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.9384 $54.3224
25+ $4.0521 $101.3025
39+ $3.9254 $153.0906
53+ $3.7988 $201.3364
69+ $3.6722 $253.3818
92+ $3.2923 $302.8916
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,034 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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