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Same model may have multiple batches, images only for reference.
FDP060AN08A0 Real Image
Same model may have multiple batches, images only for reference.

FDP060AN08A0

Part No FDP060AN08A0
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A TO-220AB
Datasheet
FDP060AN08A0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 16A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 5150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067014-FDP060AN08A0
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP060AN08A0 CAD Model

Description

The FDP060AN08A0 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 255W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 16A (Ta), 80A (Tc) at 25°C
  • Maximum Rds on: 6 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 95nC @ 10V
  • Package: TO-220-3
  • Mounting: Through Hole

The supply and demand status are balanced, and it comes in a package of 800.

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Quantity Unit Price Ext. Price
26+ $1.9518 $50.7468
63+ $1.6015 $100.8945
97+ $1.5515 $150.4955
134+ $1.5014 $201.1876
173+ $1.4514 $251.0922
231+ $1.3012 $300.5772
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