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Same model may have multiple batches, images only for reference.
FDP16N50 Real Image
Same model may have multiple batches, images only for reference.

FDP16N50

Part No FDP16N50
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A TO-220
Datasheet
FDP16N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1945pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1038310-FDP16N50
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP16N50 CAD Model

Description

The Fairchild/ON Semiconductor 1038310-FDP16N50 is an N-channel MOSFET designed for discrete semiconductor products.

  • Polarity: N-channel
  • Power Dissipation: 200W (Tc)
  • Continuous Drain Current: 16A (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 8A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8237 $63.8295
80+ $1.4957 $119.6560
120+ $1.4495 $173.9400
165+ $1.4022 $231.3630
215+ $1.3560 $291.5400
285+ $1.2162 $346.6170
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Availability: 72,800 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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