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FDP3632 Real Image FDP3632 Real Image
Same model may have multiple batches, images only for reference.
FDP3632 Real Image FDP3632 Real Image
FDP3632 Real Image FDP3632 Real Image
Same model may have multiple batches, images only for reference.

FDP3632

Part No FDP3632
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO-220AB
Datasheet
FDP3632 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 090823-FDP3632
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP3632 CAD Model

Description

The Fairchild/ON Semiconductor FDP3632 is an N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 12A (Ta) and 80A (Tc) at 25°C
  • Maximum Power Dissipation: 310W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-220-3
  • Popularity: High
  • Package Quantity: 800 pcs

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Pricing & Ordering

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Availability: 1,600 pieces
MOQ: 23 pcs
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