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Same model may have multiple batches, images only for reference.
FDP3651U Real Image
Same model may have multiple batches, images only for reference.

FDP3651U

Part No FDP3651U
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 5522pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067018-FDP3651U
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP3651U CAD Model

Description

The FDP3651U from Fairchild/ON Semiconductor is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation (Max): 255W (Tc)
  • Continuous Drain Current at 25°C: 80A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Max Gate Charge: 69nC @ 10V
  • Maximum Rds On at Id,Vgs: 18 mOhm @ 80A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Technology: MOSFET
  • Package: TO-220-3
  • Temperature Range: -55°C to 175°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Balance
  • Quantity per Package: 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.2432 $59.4048
30+ $3.9695 $119.0850
46+ $3.8327 $176.3042
65+ $3.5589 $231.3285
85+ $3.4220 $290.8700
106+ $3.2852 $348.2312
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Availability: 525 pieces
MOQ: 14 pcs
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